DC~6.0GHz 10W Broadband RF power GaN HEMT

ERIS0060-10 is a 10W universal wideband RF power GaN HEMT chip, which can be used in the range of DC~6.0GHz. ERIS0060-10 has excellent robustness (VSWR = 10:1), high voltage operation (50V), and is available in a thermally enhanced package for industrial, scientific, defense, medical, and other applications