2.7-3.5GHz GaN power amplifier module
ERI2735-P56
Gallium nitride internal-matching power transistor. It adopts advanced in-plane matching synthesis technology and mature thin-film hybrid integrated process. The typical working frequency band of the product is 2.7 – 3.5 GHZ, and it has characteristics such as high power, high efficiency and environmental adaptability such as temperature, and can be widely used in various radio-frequency/microwave systems.